TITLE:
PHOENICS-CVD ExampleBY: J R Heritage, CHAM Consultancy
DATE: 1996 PHOENICS Version: 2.2
PURPOSE OF CALCULATIONS:
To demonstrate the use of the CVD option in PHOENICS.
FLOW AND COMPUTATIONAL DETAILS
This is an idealised batch reactor for tungsten deposition; the chemistry is the same as the second example.
The reactor contains 12 wafers. As a simplifying option, it is possible to include fewer wafers and compensate for the reduced surface area.
The geometry and velocity vectors are shown below.
The geometry and velocity field.
The wafers are heated mainly by radiation from the outer wall.
The depletion caused by the surface reaction is apparent.
This is purely a product of the reaction on the wafer surface.
Although hydrogen is a reactant its mass fraction increases as the loss of tungsten reduces the mixture molar mass.
Deposition on the wafer is fairly uniform except for the leading wafers in the batch which are cooled by the incoming gas.
