TITLE: PHOENICS-CVD Example

TITLE: PHOENICS-CVD Example 1

BY: J R Heritage, CHAM Consultancy

DATE: 1996 PHOENICS Version: 2.2

PURPOSE OF CALCULATIONS:

To demonstrate the use of the CVD option in PHOENICS.

FLOW AND COMPUTATIONAL DETAILS

This is a single wafer, cold wall reactor for silicon deposition.

The incoming gas is a mixture of nitrogen and silane.

Five gas-phase and five surface reactions are included.

The geometry and velocity vectors are shown below:

The gas is heated directly by the wafer, which also loses heat to the cooled outer walls by radiation.

Si₂H₆ is involved in three gas-phase reactions, following the initial silane decomposition, and one surface reaction.

Si₃H₈ is created by a gas-phase reaction and then reacts at the wafer surface; note the depletion near the wafer.

H₂ is involved in two gas-phase reactions, but is primarily produced on the wafer as it is created in all surface reactions.